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(CityRegions.Com, August 21, 2018 ) Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity.
Over the next five years, LPI(LP Information) projects that Gallium Nitride Power Device will register a 23.7% CAGR in terms of revenue, reach US$ 1460 million by 2023, from US$ 410 million in 2017.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride Power Device market by product type, application, key manufacturers and key regions.
To calculate the market size, LP Information considers value and volume generated from the sales of the following segments:
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Segmentation by product type:
Power Device
RF Power Device
Segmentation by application:
Telecommunications
Automotive
Industrial
Medical
Military, Defense& Aerospace
Others
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The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report:
Cree Inc
Efficient Power Conversion (EPC) Corporation
Infineon Technologies
GaN Systems Inc
Macom
Microsemi Corporation
Mitsubishi Electric Corporation
Navitas Semiconductor
Qorvo, Inc
Toshiba
In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.
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Some Point from TOC:
1 Scope of the Report
2 Executive Summary
3 Global Gallium Nitride Power Device by Players
4 Gallium Nitride Power Device by Regions
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
….Continued
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