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(CityRegions.Com, August 15, 2018 ) Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM).
Resistive Random Access Memory is an emerging technology that combines the advantages of both RAM and Flash: The Resistive Random Access Memory is non-volatile, fast, cost effective and does not degrade even after many Program/Erase cycles. It has been studied and developed for the last decade and its commercial usage is expected to increase dramatically over the next few years.
The major focus of Resistive Random Access Memory technology is to replace traditional Flash memory and is widely viewed as the “most likely to succeed” Flash replacement, since it provides the performance and manufacturability advantages over competing replacement alternatives.
Over the next five years, LPI(LP Information) projects that Resistive Random Access Memory will register a 70.6% CAGR in terms of revenue, reach US$ 7000 million by 2023, from US$ 280 million in 2017.
This report presents a comprehensive overview, market shares, and growth opportunities of Resistive Random Access Memory market by product type, application, key manufacturers and key regions.
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To calculate the market size, LP Information considers value and volume generated from the sales of the following segments:
Segmentation by product type:
180 nm
40nm
Others
Segmentation by application:
Computer
IoT
Consumer Electronics
Medical
Others
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The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report:
PSCS
Adesto
Crossbar
Fujitsu
Intel
Samsung Electronics
TSMC
Micron
SK Hynix
SMIC
4DS Memory
Weebit Nano
Research objectives
To study and analyze the global Resistive Random Access Memory consumption (value & volume) by key regions/countries, product type and application, history data from 2013 to 2017, and forecast to 2023.
To understand the structure of Resistive Random Access Memory market by identifying its various subsegments.
Focuses on the key global Resistive Random Access Memory manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.
To analyze the Resistive Random Access Memory with respect to individual growth trends, future prospects, and their contribution to the total market.
To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).
To project the consumption of Resistive Random Access Memory submarkets, with respect to key regions (along with their respective key countries).
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
To strategically profile the key players and comprehensively analyze their growth strategies.
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Some Point from TOC:
1 Scope of the Report
2 Executive Summary
3 Global Resistive Random Access Memory by Players
4 Resistive Random Access Memory by Regions
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
….Continued
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Hector Costello
+1 (214) 884-6817
sales@orbisresearch.com
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